15-jun-2010 rev.c
elektronische bauelemente sst2605 -4.0a, -30v,rds(on) 80m p-channel enhancement mode power mos.fet electrical characteristics( tj=25 c unless otherwise specified) total gate charge r ds(on) h t t p : / / w w w .s e c o sg m b h .c o m/ a n y c ha n g i n g o f s pe c if i c a t i o n w ill no t b e i n f o r m ed i nd i v i dual parameter symbo l max. typ. test condition min. unit drain-source breakdown voltage breakdown voltage temp. coefficient gate threshold voltage gate-source leakage current drain-source leakage current (tj=25 ) static drain-source on-resistance drain-source leakage current (tj= 55 ) gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time input capacitance output capacitance reverse transfer capacitance bv dss bv ds / tj v gs(th) i gss i dss crss qg qgs qgd td (on) td (off) tr ciss coss t f -30 -0.02 -1.0 - 3.0 100 -1 -25 80 120 5.5 1 2.6 7 6 18 4 640 90 30 v v / v na ua ua m nc ns pf [ v gs =0v v ds =-25v f=1.0mhz v dd =-1 5v i d =-1a v gs =-10v r g =3.3 r d =15 [ [ i d =-4.0a v ds =-24v v gs =-4.5v v gs =-10v, i d =-4.0a v gs =-4.5v, i d =-3.0a v gs =0v, i d =-250ua v gs = 20 v v ds =-30v,v gs =0 v ds =-24v,v gs =0 v ds =v gs, i d =-250ua reference to 25 ,i d =- 1ma _ _ _ source-drain diode _ _ _ _ _ _ _ parameter symbo l max. typ. test condition min. unit forward on voltage v ds _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ i s =-1.6a , v gs =0v. v -1.2 notes: 1.pulse width limited by safe operating area. 2.pulse width 300us, dutycycle 2%. 2 forward transconductance gfs s 6 v ds =-5v, i d =-4.0a _ _ _ 400 8.8 reverse recovery time reverse recovery charge is=-4.0a, v gs =0v _ _ _ _ trr qrr nc ns 21 14 _ dl/dt=100a/us o c o c o c o c o 2 2 2 2 ?? ?? [ 15-jun-2010 rev. c page 2 of 4 3.surface mounted on 1 in 2 copper pad of fr4 board; 156 o c/w when mounted on min. copper pad.
elektronische bauelemente sst2605 -4.0a -30v,rds(on) 80m p-channel enhancement mode power mos.fet [ 15 -jun-2010 rev. c page 3 of 4 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 6. gate threshold voltage v.s. junction temperature fig 5. forward characteristics of reverse diode characteristics curve http://www.secosgmbh.com/ any changing of specification will not be informed individual
elektronische bauelemente sst2605 -4.0a, -30v,rds(on) 80m p-channel enhancement mode power mos.fet [ 15 -jun-2010 rev. c page 4 of 4 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 11. switching time waveform fig 12. gate charge waveform http://www.secosgmbh.com/ any changing of specification will not be informed individual
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